iCu900MB12I4

Silicon Carbide Mosfet Half Bridge based on qualified discrete components:

• RDS(on) = 1,3 mΩ @ VGS = 18V, Tvj = 25 °C
• Very low switching losses
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage VGS(th)= 4.2 V

Designed for engineers looking for a compact, efficient 1200 V SiC half-bridge, the iCu600MB12O2 combines low conduction losses with a robust module architecture based on iCuTech’s laser welding technology and D2M concept.

Typical use:
Industrial inverters, power converters, ESS, and other high-efficiency 1200 V SiC applications.