iCu600MB12O2
1200 V SiC half-bridge module with 3.7 mΩ RDS(on) for efficient inverter, converter, and energy storage applications.
1200 V SiC half-bridge module with 3.7 mΩ RDS(on) for efficient inverter, converter, and energy storage applications.
/ 01 – Overview
Silicon Carbide Mosfet Half Bridge based on
AEC-Q101 qualified discrete components:
Designed for engineers looking for a compact, efficient 1200 V SiC half-bridge, the iCu600MB12O2 combines low conduction losses with a robust module architecture based on iCuTech’s laser welding technology and D2M concept.
Typical use:
Industrial inverters, power converters, ESS, and other high-efficiency 1200 V SiC applications.
/ 02 – Specifications
| Product Code | 000701 |
| Applications | Industry |
| Voltage | 1200 V |
| Configuration | Half-Bridge |
| Dimensions (length) | 152 mm |
| Dimensions (width) | 62 mm |
| Features | LWT, D2M, CPL |
| Qualification | Industrial |
| RDS(on) | 3,7 mΩ |