iCu400MB12I2

Silicon Carbide Mosfet Half Bridge based on
AEC-Q101 qualified discrete components:

• RDS(on) = 4.3 mΩ at VGS = 18V, Tvj = 25 °C
• Very low switching losses
• Short circuit withstand time 2 µs
• Benchmark gate threshold voltage VGS(th)=4.2 V

Designed for engineers looking for a compact, efficient 1200 V SiC half-bridge, the iCu600MB12O2 combines low conduction losses with a robust module architecture based on iCuTech’s laser welding technology and D2M concept.

Typical use:
Industrial inverters, power converters, ESS, and other high-efficiency 1200 V SiC applications.